Invention Grant
US08837222B2 Methods and apparatuses including a select transistor having a body region including monocrystalline semiconductor material and/or at least a portion of its gate located in a substrate
有权
包括具有包括单晶半导体材料的主体区域和/或其位于衬底中的栅极的至少一部分的选择晶体管的方法和装置
- Patent Title: Methods and apparatuses including a select transistor having a body region including monocrystalline semiconductor material and/or at least a portion of its gate located in a substrate
- Patent Title (中): 包括具有包括单晶半导体材料的主体区域和/或其位于衬底中的栅极的至少一部分的选择晶体管的方法和装置
-
Application No.: US13282237Application Date: 2011-10-26
-
Publication No.: US08837222B2Publication Date: 2014-09-16
- Inventor: Toru Tanzawa
- Applicant: Toru Tanzawa
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C16/04
- IPC: G11C16/04 ; H01L21/04 ; H01L27/115
Abstract:
Some embodiments include apparatuses and methods having a memory cell string including memory cells located in different levels of the apparatuses and a select transistor coupled to the memory cell string. In at least one of such apparatuses, the select transistor can include a body region including a monocrystalline semiconductor material. Other embodiments including additional apparatuses and methods are described.
Public/Granted literature
Information query
