Invention Grant
- Patent Title: Magnetic tunnel junction device with diffusion barrier layer
- Patent Title (中): 具有扩散阻挡层的磁隧道结器件
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Application No.: US13323212Application Date: 2011-12-12
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Publication No.: US08837208B2Publication Date: 2014-09-16
- Inventor: Xia Li , Seung H. Kang , Xiaochun Zhu
- Applicant: Xia Li , Seung H. Kang , Xiaochun Zhu
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Sam Talpalatsky; Nicholas J. Pauley; Joseph Agusta
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H04W52/12 ; H04W52/44 ; H04W88/08 ; H04W72/12 ; H04W88/12 ; H04W52/54 ; H04W52/34 ; H04W52/26
Abstract:
A magnetic tunnel junction (MTJ) device and fabrication method is disclosed. A particular embodiment includes a magnetic tunnel junction structure above a bottom electrode. The particular embodiment further includes a portion of a diffusion barrier layer adjacent to the magnetic tunnel junction structure. A top of the magnetic tunnel junction structure is connected to a conductive layer.
Public/Granted literature
- US20120086089A1 MAGNETIC TUNNEL JUNCTION DEVICE AND FABRICATION Public/Granted day:2012-04-12
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