Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13467490Application Date: 2012-05-09
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Publication No.: US08837203B2Publication Date: 2014-09-16
- Inventor: Yutaka Shionoiri , Hidetomo Kobayashi
- Applicant: Yutaka Shionoiri , Hidetomo Kobayashi
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2011-112797 20110519
- Main IPC: G11C11/24
- IPC: G11C11/24 ; H01L27/105 ; H01L21/84 ; H01L27/12 ; G11C11/00 ; H01L27/115 ; H01L27/108

Abstract:
The data in a volatile memory may conventionally be lost even in case of a very short time power down or supply voltage drop such as an outage or sag. In view of the foregoing, an object is to extend data retention time even with a volatile memory for high-speed data processing. Data retention time can be extended by backing up the data content stored in the volatile memory in a memory including a capacitor and an oxide semiconductor transistor.
Public/Granted literature
- US20120292613A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-11-22
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