Invention Grant
US08837201B2 Programming an array of resistance random access memory cells using unipolar pulses
有权
使用单极脉冲编程电阻随机存取存储器单元阵列
- Patent Title: Programming an array of resistance random access memory cells using unipolar pulses
- Patent Title (中): 使用单极脉冲编程电阻随机存取存储器单元阵列
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Application No.: US13917992Application Date: 2013-06-14
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Publication No.: US08837201B2Publication Date: 2014-09-16
- Inventor: Ferdinando Bedeschi , Innocenzo Tortorelli
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe Martens Olson & Bear, LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/56 ; G11C13/00
Abstract:
Subject matter disclosed herein relates to a memory device, and more particularly to programming a non-volatile memory device.
Public/Granted literature
- US20130279238A1 PROGRAMMING AN ARRAY OF RESISTANCE RANDOM ACCESS MEMORY CELLS USING UNIPOLAR PULSES Public/Granted day:2013-10-24
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