Invention Grant
US08837197B2 Circuit for generating write signal, variable resistance memory device, and method for programming variable resistance memory
有权
用于产生写入信号的电路，可变电阻存储器件以及编程可变电阻存储器的方法
- Patent Title: Circuit for generating write signal, variable resistance memory device, and method for programming variable resistance memory
- Patent Title (中): 用于产生写入信号的电路，可变电阻存储器件以及编程可变电阻存储器的方法
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Application No.: US13369361Application Date: 2012-02-09
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Publication No.: US08837197B2Publication Date: 2014-09-16
- Inventor: Young-Hoon Oh , Young-Don Choi , Ick-Hyun Song
- Applicant: Young-Hoon Oh , Young-Don Choi , Ick-Hyun Song
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2011-0084137 20110823
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00
Abstract:
A circuit for generating a write signal includes a pre-emphasis signal generator that receives location information of a to-be-programmed memory cell and generates a pre-emphasis signal depending on the location information of the to-be-programmed memory cell, and a write driver that generates a program signal corresponding to data to be programmed in the to-be-programmed memory cell. A write signal is generated by combining the program signal with the pre-emphasis signal supplied from the pre-emphasis signal generator, and the write signal output to the to-be-programmed memory cell.
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