Invention Grant
- Patent Title: Apparatus and method for flash memory address translation
- Patent Title (中): 闪存地址转换的装置和方法
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Application No.: US13025267Application Date: 2011-02-11
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Publication No.: US08832356B2Publication Date: 2014-09-09
- Inventor: Sung Hoon Baek , Jin Kyu Kim
- Applicant: Sung Hoon Baek , Jin Kyu Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2010-0012821 20100211
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F12/02
Abstract:
Provided is a flash memory address translation method that may maintain at least one chip that may be divided based on at least one horizontal bank and at least one vertical channel, and may divide the at least one bank by at least one stripe partition, managing an error of a chip without deterioration in a performance of a small writing.
Public/Granted literature
- US20110271039A1 APPARATUS AND METHOD FOR FLASH MEMORY ADDRESS TRANSLATION Public/Granted day:2011-11-03
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