Invention Grant
- Patent Title: Negative charge pump regulation
- Patent Title (中): 负电荷泵调节
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Application No.: US13835068Application Date: 2013-03-15
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Publication No.: US08830776B1Publication Date: 2014-09-09
- Inventor: Jon S. Choy , Gilles J. Muller , Karthik Ramanan
- Applicant: Freescale Semiconductor, Inc.
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G05F1/46

Abstract:
A negative charge pump is responsive to a pump enable signal. A voltage controlled current source provides a current. A resistor is coupled between a node from the voltage controlled current source and a negative charge output from the negative charge pump. A capacitor is placed in parallel with the resistor. A comparator generates the pump enable signal to control the negative charge pump. The comparator is coupled to the resistor and the capacitor and measures an IR drop thereacross and compares this measurement against a reference threshold. A level of the pump enable signal can be variable by tuning an amount of resistance of the resistor or capacitor or adjusting the reference threshold. A memory can be driven by a method of the negative charge pump.
Public/Granted literature
- US20140269132A1 NEGATIVE CHARGE PUMP REGULATION Public/Granted day:2014-09-18
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