Invention Grant
- Patent Title: Semiconductor memory device and data erase method thereof
- Patent Title (中): 半导体存储器件及其数据擦除方法
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Application No.: US13341241Application Date: 2011-12-30
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Publication No.: US08830764B2Publication Date: 2014-09-09
- Inventor: Young Soo Park
- Applicant: Young Soo Park
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2011-0009809 20110131
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A semiconductor memory device includes: a plurality of memory cells coupled in series between a bit line and a source line; and a bit line control voltage supply unit configured to provide a control voltage to the bit line according to an operation mode, wherein the bit line control voltage supply unit provides a control voltage having a ground voltage level to the bit line during a soft programming operation.
Public/Granted literature
- US20120195130A1 SEMICONDUCTOR MEMORY DEVICE AND DATA ERASE METHOD THEREOF Public/Granted day:2012-08-02
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