According to one embodiment, a method for operating a nonvolatile semiconductor memory device, the device includes a memory unit having a memory string, and a control unit. The memory string includes a plurality of transistors and has a first group being part of the transistors, a adjusting transistor connected next to the first group, and a second group including transistors connected to a side opposite the first group with respect to the adjusting transistor. The method includes rewriting the threshold values of the transistors of the first group, and then performing control so as to set a first threshold value for adjustment to the adjusting transistor to adjust an amount corresponding to relative variations in the threshold values of the transistors of the second group, the relative variations being caused by the rewrite of the threshold values of the transistors of the first group.