Invention Grant
US08830753B2 NonVolatile memory devices, methods of programming the same, and memory systems including the same
有权
非易失性存储器件，其编程方法以及包括其的存储器系统
- Patent Title: NonVolatile memory devices, methods of programming the same, and memory systems including the same
- Patent Title (中): 非易失性存储器件，其编程方法以及包括其的存储器系统
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Application No.: US13194013Application Date: 2011-07-29
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Publication No.: US08830753B2Publication Date: 2014-09-09
- Inventor: Seung-bum Kim
- Applicant: Seung-bum Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0073532 20100729
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/06 ; G11C16/10 ; G11C16/24
Abstract:
A nonvolatile memory device including a bit line connected to a cell string, a page buffer connected to the bit line, the page buffer is configured to output a target bit line forcing voltage level to the bit line during a programming operation, and a bit line forcing voltage clamp circuit connected between the bit line and the page buffer, and the bit line forcing voltage clamp circuit is configured to adjust the target bit line forcing voltage level to the bit line.
Public/Granted literature
- US20120026797A1 NonVolatile Memory Devices, Methods Of Programming The Same, And Memory Systems Including The Same Public/Granted day:2012-02-02
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