Invention Grant
- Patent Title: Resistive memory apparatus
- Patent Title (中): 电阻式存储装置
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Application No.: US13602146Application Date: 2012-09-01
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Publication No.: US08830729B2Publication Date: 2014-09-09
- Inventor: Chul Hyun Park , Taek Sang Song
- Applicant: Chul Hyun Park , Taek Sang Song
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2011-0136548 20111216
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A resistive memory apparatus includes a sensing voltage generation unit and a memory cell. The sensing voltage generation unit configured to drive a sensing node to a voltage with a predetermined level in response to a reference voltage and a voltage of the sensing node. The memory cell is connected with the sensing node and configured to change a magnitude of current flowing through the sensing node according to a resistance value thereof.
Public/Granted literature
- US20130155755A1 RESISTIVE MEMORY APPARATUS Public/Granted day:2013-06-20
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