Invention Grant
US08830728B2 Resistance change memory device and current trimming method thereof
有权
电阻变化存储器件及其电流修整方法
- Patent Title: Resistance change memory device and current trimming method thereof
- Patent Title (中): 电阻变化存储器件及其电流修整方法
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Application No.: US13554146Application Date: 2012-07-20
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Publication No.: US08830728B2Publication Date: 2014-09-09
- Inventor: Jung Hyuk Lee , Daewon Ha , Kyu-Rie Sim
- Applicant: Jung Hyuk Lee , Daewon Ha , Kyu-Rie Sim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2011-0083412 20110822
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C8/00 ; G11C29/02 ; G11C13/00 ; G11C17/16 ; G11C11/16 ; G11C29/50
Abstract:
A resistance change memory device includes an array of resistance change memory cells, and a writing circuit configured to reset a selected memory cell to a high resistance state by supplying a RESET current to the selected memory cell in the array of resistance change memory cells in a program operation mode, wherein a level of the RESET current depends on a distribution of initial RESET currents for the array of resistance change memory cells.
Public/Granted literature
- US20130051123A1 RESISTANCE CHANGE MEMORY DEVICE AND CURRENT TRIMMING METHOD THEREOF Public/Granted day:2013-02-28
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