Invention Grant
US08830724B2 Methods of operating PRAMS using initial programmed resistances and PRAMS using the same
有权
使用初始编程电阻运行PRAMS的方法和使用其的PRAMS
- Patent Title: Methods of operating PRAMS using initial programmed resistances and PRAMS using the same
- Patent Title (中): 使用初始编程电阻运行PRAMS的方法和使用其的PRAMS
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Application No.: US13168553Application Date: 2011-06-24
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Publication No.: US08830724B2Publication Date: 2014-09-09
- Inventor: Sang Hoan Chang
- Applicant: Sang Hoan Chang
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2010-0099366 20101012
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A method of operating a PRAM device includes reading a PRAM reference cell to determine an initial programmed resistance of the PRAM reference cell and determining whether the initial programmed resistance has been reduced to below a predetermined reference threshold resistance.
Public/Granted literature
- US20120087183A1 METHODS OF OPERATING PRAMS USING INITIAL PROGRAMMED RESISTANCES AND PRAMS USING THE SAME Public/Granted day:2012-04-12
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