Invention Grant
- Patent Title: Method of driving nonvolatile semiconductor device
- Patent Title (中): 驱动非易失性半导体器件的方法
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Application No.: US14030619Application Date: 2013-09-18
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Publication No.: US08830723B2Publication Date: 2014-09-09
- Inventor: Yukihiro Kaneko
- Applicant: Panasonic Corporation
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Renner, Otto, Boisselle & Sklar, LLP
- Priority: JP2012-023603 20120207
- Main IPC: G11C11/22
- IPC: G11C11/22 ; G11C11/56 ; H01L29/78 ; H01L29/51 ; H01L21/28 ; G11C13/00 ; G11C5/02

Abstract:
Pulse voltages V1 and V2 are applied to the first upper gate electrode and the second upper gate electrode, respectively, for a period T1 which is shorter than a period necessary to invert all the polarizations included in the ferroelectric film, while voltages Vs, Vd, and V3 are applied to the source electrode, the drain electrode, and the lower gate electrode film, respectively, so as to increase the values of the widths WRH1 and WRH2 and so as to decrease the value of the width WRL. The pulse voltages V1 and V2 have a smaller voltage than a voltage necessary to invert all the polarizations included in the ferroelectric film. The voltage Vs, the voltage Vd, the voltage V3, the pulse voltage V1, and the pulse voltage V2 satisfy the following relationship: Vs, Vd, V3
Public/Granted literature
- US20140016395A1 METHOD OF DRIVING NONVOLATILE SEMICONDUCTOR DEVICE Public/Granted day:2014-01-16
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