Invention Grant
- Patent Title: Optimized configurable NAND parameters
- Patent Title (中): 优化的可配置NAND参数
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Application No.: US13791200Application Date: 2013-03-08
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Publication No.: US08830717B2Publication Date: 2014-09-09
- Inventor: Chris Nga Yee Avila , Yingda Dong , Man Lung Mui
- Applicant: SanDisk Technologies Inc.
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Davis Wright Tremaine LLP
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C7/24 ; G11C8/10

Abstract:
Configurable parameters may be used to access NAND flash memory according to schemes that optimize such parameters according to predicted characteristics of memory cells, for example, as a function of certain memory cell device geometry, which may be predicted based on the location of a particular device within a memory array.
Public/Granted literature
- US20140149641A1 Optimized Configurable NAND Parameters Public/Granted day:2014-05-29
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