Invention Grant
- Patent Title: High density capacitor
- Patent Title (中): 高密度电容器
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Application No.: US13149849Application Date: 2011-05-31
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Publication No.: US08830656B2Publication Date: 2014-09-09
- Inventor: Wim Besling , Klaus Reimann
- Applicant: Wim Besling , Klaus Reimann
- Applicant Address: NL Eindhoven
- Assignee: NXP, B.V.
- Current Assignee: NXP, B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP10164669 20100601
- Main IPC: H01G9/02
- IPC: H01G9/02 ; H01G9/04 ; H01G9/145 ; H01G9/28 ; H01G9/042 ; H01M10/0525

Abstract:
A high density capacitor 12, a method of manufacturing it, and applications of it are described. The capacitor 12 is an electrochemical capacitor using a metal ion accepting cathode 22 and a metal ion accepting anode 26 and a amorphous solid electrolyte 24 between. The cathode and anode may be of amorphous lithium ion intercalating material such as suitable transition metal oxides with multiple oxidation states.
Public/Granted literature
- US20110292574A1 HIGH DENSITY CAPACITOR Public/Granted day:2011-12-01
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