Invention Grant
- Patent Title: Electrostatic discharge protection circuit
- Patent Title (中): 静电放电保护电路
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Application No.: US13529018Application Date: 2012-06-21
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Publication No.: US08830640B2Publication Date: 2014-09-09
- Inventor: Karim T. Taghizadeh Kaschani
- Applicant: Karim T. Taghizadeh Kaschani
- Applicant Address: DE Freising
- Assignee: Texas Instruments Deutschland GmbH
- Current Assignee: Texas Instruments Deutschland GmbH
- Current Assignee Address: DE Freising
- Agent Alan A. R. Cooper; Frederick J. Telecky, Jr.
- Main IPC: H01H9/00
- IPC: H01H9/00

Abstract:
Electronic device comprising an electronic circuit and an ESD protection circuit is provided. The ESD protection circuit comprises a first and a second protection stage, wherein the second protection stage comprises at least one high side CMOS-transistor and a low side CMOS-transistor acting as power dissipating rail clamps. The at least one high side CMOS-transistor and the low side CMOS-transistor are coupled so as to provide an anti-series connection of Zener diodes between a node of the electronic device and a supply voltage rail. Further, the high side CMOS-transistors and the low side CMOS-transistor are complementary CMOS-transistors.
Public/Granted literature
- US20130342940A1 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT Public/Granted day:2013-12-26
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