Invention Grant
US08830640B2 Electrostatic discharge protection circuit 有权
静电放电保护电路

Electrostatic discharge protection circuit
Abstract:
Electronic device comprising an electronic circuit and an ESD protection circuit is provided. The ESD protection circuit comprises a first and a second protection stage, wherein the second protection stage comprises at least one high side CMOS-transistor and a low side CMOS-transistor acting as power dissipating rail clamps. The at least one high side CMOS-transistor and the low side CMOS-transistor are coupled so as to provide an anti-series connection of Zener diodes between a node of the electronic device and a supply voltage rail. Further, the high side CMOS-transistors and the low side CMOS-transistor are complementary CMOS-transistors.
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