The present disclosure is directed to a method for inspecting a wafer, the wafer including a film deposited on a surface of the wafer. The film may have a thickness that varies over the surface of the wafer. The method includes the step of measuring the thickness, refractive index, and extinction coefficient of the film across the surface of the wafer. With this data a film curve is created in real time. The method also includes the step of determining a size of a defect on the surface based on at least the film curve.