Invention Grant
- Patent Title: Body-contacted partially depleted silicon on insulator transistor
- Patent Title (中): 体内接触部分耗尽的绝缘体上硅晶体管
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Application No.: US13535203Application Date: 2012-06-27
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Publication No.: US08829967B2Publication Date: 2014-09-09
- Inventor: George Nohra
- Applicant: George Nohra
- Applicant Address: US OR Hillsboro
- Assignee: TriQuint Semiconductor, Inc.
- Current Assignee: TriQuint Semiconductor, Inc.
- Current Assignee Address: US OR Hillsboro
- Agency: Schwabe Williamson & Wyatt
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H03K5/02
Abstract:
Embodiments include an apparatus, system, and method related to a body-contacted partially depleted silicon on insulator (PDSOI) transistor that may be used in a switch circuit. In some embodiments, the switch circuit may include a discharge transistor to provide a discharge path for a body of a switch transistor. Other embodiments may be described and claimed.
Public/Granted literature
- US20140002171A1 BODY-CONTACTED PARTIALLY DEPLETED SILICON ON INSULATOR TRANSISTOR Public/Granted day:2014-01-02
Information query
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