Invention Grant
- Patent Title: Gate drive circuit
- Patent Title (中): 门驱动电路
-
Application No.: US13667896Application Date: 2012-11-02
-
Publication No.: US08829952B2Publication Date: 2014-09-09
- Inventor: Hiroshi Sakata , Akihisa Yamamoto , Mitsutaka Hano
- Applicant: Hiroshi Sakata , Akihisa Yamamoto , Mitsutaka Hano
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2012-036450 20120222
- Main IPC: H03K3/00
- IPC: H03K3/00

Abstract:
A gate drive circuit of the present invention is a gate drive circuit for driving an insulated gate switching element, which comprises a control drive circuit for applying a driving voltage to a control terminal of the switching element at a predetermined timing, and a voltage monitoring circuit for monitoring both a first voltage which is a power supply voltage of the control drive circuit and a second voltage which negatively biases the control terminal of the switching element, and in the gate drive circuit, the control drive circuit cuts off an output when at least one of the first and second voltages monitored by the voltage monitoring circuit becomes lower than a threshold value. It is an object of the present invention to provide an insulated gate switching element which can suppress wrong ON.
Public/Granted literature
- US20130214822A1 GATE DRIVE CIRCUIT Public/Granted day:2013-08-22
Information query