Invention Grant
US08829767B2 Large-scale fabrication of vertically aligned ZnO nanowire arrays
有权
垂直排列的ZnO纳米线阵列的大规模制造
- Patent Title: Large-scale fabrication of vertically aligned ZnO nanowire arrays
- Patent Title (中): 垂直排列的ZnO纳米线阵列的大规模制造
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Application No.: US13473867Application Date: 2012-05-17
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Publication No.: US08829767B2Publication Date: 2014-09-09
- Inventor: Zhong Lin Wang , Youfan Hu , Yan Zhang , Chen Xu , Guang Zhu
- Applicant: Zhong Lin Wang , Youfan Hu , Yan Zhang , Chen Xu , Guang Zhu
- Applicant Address: US GA Atlanta
- Assignee: Georgia Tech Research Corporation
- Current Assignee: Georgia Tech Research Corporation
- Current Assignee Address: US GA Atlanta
- Agency: Bockhop & Associates, LLC
- Agent Bryan W. Bockhop
- Main IPC: H01L41/113
- IPC: H01L41/113 ; H02N2/18 ; B82Y30/00 ; B82Y5/00 ; H01L27/20 ; B82Y40/00 ; H01L41/319

Abstract:
A generator includes a substrate, a first electrode layer, a dense plurality of vertically-aligned piezoelectric elongated nanostructures, an insulating layer and a second electrode layer. The substrate has a top surface and the first electrode layer is disposed on the top surface of the substrate. The dense plurality of vertically-aligned piezoelectric elongated nanostructures extends from the first electrode layer. Each of the nanostructures has a top end. The insulating layer is disposed on the top ends of the nanostructures. The second electrode layer is disposed on the non-conductive layer and is spaced apart from the nanostructures.
Public/Granted literature
- US20120293047A1 Large-scale Fabrication of Vertically Aligned ZnO Nanowire Arrays Public/Granted day:2012-11-22
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