Invention Grant
US08829650B2 Zener diode in a SiGe BiCMOS process and method of fabricating the same
有权
SiGe BiCMOS工艺中的齐纳二极管及其制造方法
- Patent Title: Zener diode in a SiGe BiCMOS process and method of fabricating the same
- Patent Title (中): SiGe BiCMOS工艺中的齐纳二极管及其制造方法
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Application No.: US13734464Application Date: 2013-01-04
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Publication No.: US08829650B2Publication Date: 2014-09-09
- Inventor: Donghua Liu , Jun Hu , Wenting Duan , Wensheng Qian , Jing Shi
- Applicant: Shanghai Hua Hong Nec Electronics Co., Ltd.
- Applicant Address: CN Shanghai
- Assignee: Shanghai Hua Hong Nec Electronics Co., Ltd.
- Current Assignee: Shanghai Hua Hong Nec Electronics Co., Ltd.
- Current Assignee Address: CN Shanghai
- Agency: MKG, LLC
- Priority: CN201210004113 20120106
- Main IPC: H01L29/866
- IPC: H01L29/866 ; H01L29/66 ; H01L21/82 ; H01L27/04 ; H01L27/06 ; H01L21/8249 ; H01L29/737 ; H01L27/08 ; H01L29/161
Abstract:
A zener diode in a SiGe BiCMOS process is disclosed. An N-type region of the zener diode is formed in an active region and surrounded by an N-deep well. A pseudo buried layer is formed under each of the shallow trench field oxide regions on a corresponding side of the active region, and the N-type region is connected to the pseudo buried layers via the N-deep well. The N-type region has its electrode picked up by deep hole contacts. A P-type region of the zener diode is formed of a P-type ion implanted region in the active region. The P-type region is situated above and in contact with the N-type region, and has a doping concentration greater than that of the N-type region. The P-type region has its electrode picked up by metal contact. A method of fabricating zener diode in a SiGe BiCMOS process is also disclosed.
Public/Granted literature
- US20130175581A1 ZENER DIODE IN A SIGE BICMOS PROCESS AND METHOD OF FABRICATING THE SAME Public/Granted day:2013-07-11
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