Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13512330Application Date: 2012-04-09
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Publication No.: US08829642B2Publication Date: 2014-09-09
- Inventor: Haizhou Yin , Wei Jiang
- Applicant: Haizhou Yin , Wei Jiang
- Applicant Address: CN Beijing
- Assignee: The Institute of Microelectronics, Chinese Academy of Science
- Current Assignee: The Institute of Microelectronics, Chinese Academy of Science
- Current Assignee Address: CN Beijing
- Agency: Treasure IP Group
- Priority: CN201210088445 20120329
- International Application: PCT/CN2012/000465 WO 20120409
- International Announcement: WO2013/143033 WO 20131003
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L29/02
Abstract:
The present invention discloses a semiconductor device, which comprises: a substrate, and a shallow trench isolation in the substrate, characterized in that, the semiconductor device further comprises a stress release layer between the substrate and the shallow trench isolation. In the semiconductor device and the method for manufacturing the same according to the present invention, the stresses accumulated during the formation of the STI can be released by interposing the stress release layer made of a softer material between the substrate and the STI, thereby reducing the leakage current of the substrate of the device and improving the device reliability.
Public/Granted literature
- US20130256845A1 Semiconductor Device and Method for Manufacturing the Same Public/Granted day:2013-10-03
Information query
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