Invention Grant
US08829637B2 Image sensor with controllable vertically integrated photodetectors using a buried layer
有权
具有可控垂直集成光电探测器的图像传感器，使用埋层
- Patent Title: Image sensor with controllable vertically integrated photodetectors using a buried layer
- Patent Title (中): 具有可控垂直集成光电探测器的图像传感器，使用埋层
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Application No.: US13193667Application Date: 2011-07-29
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Publication No.: US08829637B2Publication Date: 2014-09-09
- Inventor: John P. McCarten , Robert Michael Guidash
- Applicant: John P. McCarten , Robert Michael Guidash
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Howard & Howard Attorneys PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/146 ; H01L31/02
Abstract:
An image sensor includes front-side and backside photodetectors of a first conductivity type disposed in a substrate layer of the first conductivity type. A front-side pinning layer of a second conductivity type is connected to a first contact. The first contact receives a predetermined potential. A backside pinning layer of the second conductivity type is connected to a second contact. The second contact receives an adjustable and programmable potential.
Public/Granted literature
- US20130026594A1 IMAGE SENSOR WITH CONTROLLABLE VERTICALLY INTEGRATED PHOTODETECTORS Public/Granted day:2013-01-31
Information query
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