Invention Grant
- Patent Title: Semiconductor device and method of forming the same
- Patent Title (中): 半导体器件及其形成方法
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Application No.: US13397029Application Date: 2012-02-15
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Publication No.: US08829583B2Publication Date: 2014-09-09
- Inventor: Hiroaki Taketani
- Applicant: Hiroaki Taketani
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.A.R.L.
- Current Assignee: PS4 Luxco S.A.R.L.
- Current Assignee Address: LU Luxembourg
- Agency: Young & Thompson
- Priority: JP2011-034896 20110221
- Main IPC: H01L27/108
- IPC: H01L27/108

Abstract:
A semiconductor device includes a semiconductor device may include, but is not limited to, a semiconductor substrate, an isolation electrode, a gate electrode, a gate insulating film, and a first insulating film. The semiconductor substrate has a first groove and a second groove. An isolation electrode is positioned in the first groove. The gate electrode is positioned in the second groove. The gate insulating film is adjacent to the gate electrode. The first insulating film is adjacent to the isolation electrode. The isolation electrode is greater in threshold voltage than the gate electrode.
Public/Granted literature
- US20120211813A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME Public/Granted day:2012-08-23
Information query
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