A maximum-punch-through semiconductor device such as an insulated gate bipolar transistor (IGBT) or a diode, and a method for producing same are disclosed. The MPT semiconductor device can include at least a two-layer structure having an emitter metallization, a channel region, a base layer with a predetermined doping concentration ND, a buffer layer and a collector metallization. A thickness W of the base layer can be determined by: W = V bd + V pt 4010 ⁢ ⁢ kV ⁢ ⁢ cm - 5 / 8 * ( N D ) 1 / 8 wherein a punch-through voltage Vpt of the semiconductor device is between 70% and 99% of a break down voltage Vbd of the semiconductor device, and wherein the thickness W is a minimum thickness of the base layer between a junction to the channel region and the buffer layer.