Invention Grant
- Patent Title: Light emitting diode and method for manufacturing the same
- Patent Title (中): 发光二极管及其制造方法
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Application No.: US13424627Application Date: 2012-03-20
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Publication No.: US08829487B2Publication Date: 2014-09-09
- Inventor: Wei-Chi Lee , Shiue-Lung Chen , Jang-Ho Chen
- Applicant: Wei-Chi Lee , Shiue-Lung Chen , Jang-Ho Chen
- Applicant Address: TW Taoyuan
- Assignee: Walsin Lihwa Corporation
- Current Assignee: Walsin Lihwa Corporation
- Current Assignee Address: TW Taoyuan
- Agency: McClure, Qualey & Rodack, LLP
- Priority: TW101105457A 20120220
- Main IPC: H01L33/46
- IPC: H01L33/46 ; H01L33/38 ; H01L33/00 ; H01L33/20 ; H01L33/22 ; H01L33/40
Abstract:
A light emitting diode (LED) is provided. The LED includes a carrying substrate, a semiconductor composite layer and an electrode. The semiconductor composite layer is disposed on the carrying substrate, and an upper surface of the semiconductor composite layer includes a patterned surface and a flat surface. The electrode is disposed on the flat surface. A method for manufacturing the light emitting diode is provided as well.
Public/Granted literature
- US20120241719A1 Light Emitting Diode and Method for Manufacturing the Same Public/Granted day:2012-09-27
Information query
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