Invention Grant
US08829424B2 Method and apparatus for monitoring electron beam condition of scanning electron microscope
有权
用于监测扫描电子显微镜电子束条件的方法和装置
- Patent Title: Method and apparatus for monitoring electron beam condition of scanning electron microscope
- Patent Title (中): 用于监测扫描电子显微镜电子束条件的方法和装置
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Application No.: US13756148Application Date: 2013-01-31
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Publication No.: US08829424B2Publication Date: 2014-09-09
- Inventor: BoXiu Cai , Yi Huang
- Applicant: BoXiu Cai , Yi Huang
- Applicant Address: CN CN
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN CN
- Agency: Innovation Counsel LLP
- Priority: CN201210427489 20121031
- Main IPC: G01D18/00
- IPC: G01D18/00 ; H01J37/26
Abstract:
A method and an apparatus for monitoring an electron beam condition of an SEM are provided. The SEM includes an electron gun and an electromagnetic lens system. The method includes acquiring quality parameters of an input electron beam, wherein the input electron beam is provided by the electron gun to the electromagnetic lens system, acquiring a current set of operation parameters of the electromagnetic lens system, calculating quality parameters of an output electron beam of the electromagnetic lens system, based on the quality parameters of the input electron beam and one or more operation parameters of the current set of operation parameters, and determining, based on the quality parameters of the output electron beam, whether calibration of the SEM is required.
Public/Granted literature
- US20140117218A1 METHOD AND APPARATUS FOR MONITORING ELECTRON BEAM CONDITION OF SCANNING ELECTRON MICROSCOPE Public/Granted day:2014-05-01
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