Invention Grant
US08829336B2 Nanostructured quantum dots or dashes in photovoltaic devices and methods thereof
有权
光伏器件中的纳米结构化量子点或破折号及其方法
- Patent Title: Nanostructured quantum dots or dashes in photovoltaic devices and methods thereof
- Patent Title (中): 光伏器件中的纳米结构化量子点或破折号及其方法
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Application No.: US11744010Application Date: 2007-05-03
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Publication No.: US08829336B2Publication Date: 2014-09-09
- Inventor: Ryne P. Raffaelle , David M. Wilt
- Applicant: Ryne P. Raffaelle , David M. Wilt
- Applicant Address: US NY Rochester
- Assignee: Rochester Institute of Technology
- Current Assignee: Rochester Institute of Technology
- Current Assignee Address: US NY Rochester
- Agency: Bond Schoeneck & King PLLC
- Agent Joseph M. Noto
- Main IPC: H01L31/05
- IPC: H01L31/05 ; H01L31/075 ; B82Y20/00 ; H01L27/142 ; H01L31/0352
Abstract:
A photovoltaic device includes one or more structures, an array of at least one of quantum dots and quantum dashes, at least one groove, and at least one conductor. Each of the structures comprises an intrinsic layer on one of an n type layer and a p type layer and the other one of the n type layer and the p type layer on the intrinsic layer. The array of at least one of quantum dots and quantum dashes is located in the intrinsic layer in at least one of the structures. The groove extends into at least one of the structures and the conductor is located along at least a portion of the groove.
Public/Granted literature
- US20080011349A1 NANOSTRUCTURED QUANTUM DOTS OR DASHES IN PHOTOVOLTAIC DEVICES AND METHODS THEREOF Public/Granted day:2008-01-17
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