Invention Grant
- Patent Title: Method and apparatus for manufacturing semiconductor device
- Patent Title (中): 用于制造半导体器件的方法和装置
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Application No.: US13884816Application Date: 2011-11-10
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Publication No.: US08828880B2Publication Date: 2014-09-09
- Inventor: Hiroyuki Takahashi
- Applicant: Hiroyuki Takahashi
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-252465 20101111
- International Application: PCT/JP2011/075942 WO 20111110
- International Announcement: WO2012/063901 WO 20120518
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01L29/78 ; H01L21/311 ; H01L21/306
Abstract:
A method for manufacturing a semiconductor device by etching a SiN film on a surface of a substrate by using a gas containing a halogen element includes supplying a gas containing a basic gas at the initial stage of a process for supplying the gas containing the halogen element to the surface of the SiN film. By supplying the gas containing the basic gas at the initial stage of the etching, a SiNO film covering the surface of the SiN film is changed to a film of reaction products mainly including water (H2O) and ammonium hexafluorosilicate ((NH4)2SiF6).
Public/Granted literature
- US20130237061A1 METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2013-09-12
Information query
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