Invention Grant
- Patent Title: Large dimension device and method of manufacturing same in gate last process
- Patent Title (中): 大尺寸装置及其制造方法
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Application No.: US14083956Application Date: 2013-11-19
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Publication No.: US08828838B2Publication Date: 2014-09-09
- Inventor: Harry-Hak-Lay Chuang , Ming Zhu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
An integrated circuit device and methods of manufacturing the same are disclosed. In an example, integrated circuit device includes a capacitor having a doped region disposed in a semiconductor substrate, a dielectric layer disposed over the doped region, and an electrode disposed over the dielectric layer. At least one post feature embedded in the electrode.
Public/Granted literature
- US20140065786A1 Large Dimension Device and Method of Manufacturing Same in Gate Last Process Public/Granted day:2014-03-06
Information query
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