Manufacturing method of semiconductor device comprising steps of forming oxide semiconductor film, performing heat treatment on the oxide semiconductor film, and performing oxygen doping treatment on the oxide semiconductor film after the heat treatment

Invention Grant

US08828811B2 Manufacturing method of semiconductor device comprising steps of forming oxide semiconductor film, performing heat treatment on the oxide semiconductor film, and performing oxygen doping treatment on the oxide semiconductor film after the heat treatment 有权

Title translation: 半导体器件的制造方法包括以下步骤：形成氧化物半导体膜，对氧化物半导体膜进行热处理，并且在热处理之后对氧化物半导体膜进行氧掺杂处理

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Patent Title: Manufacturing method of semiconductor device comprising steps of forming oxide semiconductor film, performing heat treatment on the oxide semiconductor film, and performing oxygen doping treatment on the oxide semiconductor film after the heat treatment
Patent Title (中): 半导体器件的制造方法包括以下步骤：形成氧化物半导体膜，对氧化物半导体膜进行热处理，并且在热处理之后对氧化物半导体膜进行氧掺杂处理
Application No.: US13091181

Application Date: 2011-04-21
Publication No.: US08828811B2

Publication Date: 2014-09-09
Inventor: Shunpei Yamazaki
Applicant: Shunpei Yamazaki
Applicant Address: JP Atsugi-shi, Kanagawa-ken
Assignee: Semiconductor Energy Laboratory Co., Ltd.
Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
Agency: Fish & Richardson P.C.
Priority: JP2010-100343 20100423
Main IPC: H01L21/84
IPC: H01L21/84 ; H01L29/786 ; H01L29/417 ; H01L29/66 ; H01L29/49 ; H01L29/45

Manufacturing method of semiconductor device comprising steps of forming oxide semiconductor film, performing heat treatment on the oxide semiconductor film, and performing oxygen doping treatment on the oxide semiconductor film after the heat treatment

Abstract:

A semiconductor device using an oxide semiconductor, with stable electric characteristics and high reliability. In a process for manufacturing a bottom-gate transistor including an oxide semiconductor film, dehydration or dehydrogenation is performed by heat treatment and oxygen doping treatment is performed. The transistor including the oxide semiconductor film subjected to the dehydration or dehydrogenation by the heat treatment and the oxygen doping treatment is a transistor having high reliability in which the amount of change in threshold voltage of the transistor by the bias-temperature stress test (BT test) can be reduced.

Abstract(Chinese):

使用氧化物半导体的半导体器件，具有稳定的电特性和高可靠性。在制造包括氧化物半导体膜的底栅晶体管的工艺中，通过热处理进行脱水或脱氢，并进行氧掺杂处理。包括通过热处理和氧掺杂处理进行脱水或脱氢的氧化物半导体膜的晶体管是具有高可靠性的晶体管，其中通过偏置 - 温度应力测试（BT测试）晶体管的阈值电压的变化量）可以减少。

Public/Granted literature

US20110260171A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOFR Public/Granted day:2011-10-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/84	.....衬底不是半导体的，例如绝缘体