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US08828742B2 Method of manufacturing magnetoresistive effect element that includes forming insulative sidewall metal oxide layer by sputtering particles of metal material from patterned metal layer 有权
制造磁阻效应元件的方法包括通过从图案化的金属层溅射金属材料的颗粒来形成绝缘的侧壁金属氧化物层

  • Patent Title: Method of manufacturing magnetoresistive effect element that includes forming insulative sidewall metal oxide layer by sputtering particles of metal material from patterned metal layer
  • Patent Title (中): 制造磁阻效应元件的方法包括通过从图案化的金属层溅射金属材料的颗粒来形成绝缘的侧壁金属氧化物层
  • Application No.: US13290779
    Application Date: 2011-11-07
  • Publication No.: US08828742B2
    Publication Date: 2014-09-09
  • Inventor: Yoshihisa Iba
  • Applicant: Yoshihisa Iba
  • Applicant Address: JP Yokohama
  • Assignee: Fujitsu Semiconductor Limited
  • Current Assignee: Fujitsu Semiconductor Limited
  • Current Assignee Address: JP Yokohama
  • Agency: Fujitsu Patent Center
  • Priority: JP2010-269249 20101202
  • Main IPC: H01L21/473
  • IPC: H01L21/473 ;  H01L43/12 ;  H01L43/08 ;  H01L27/22
Method of manufacturing magnetoresistive effect element that includes forming insulative sidewall metal oxide layer by sputtering particles of metal material from patterned metal layer
Abstract:
A method of manufacturing a magnetoresistive effect element includes forming a first electrode above a substrate, forming a metal layer of a metal material above the first electrode, forming a first magnetic layer above the metal layer, forming a tunnel insulating film above the first magnetic layer, forming a second magnetic layer above the tunnel insulating film, forming a second electrode layer above the second magnetic layer, patterning the second electrode layer, patterning the second magnetic layer, the tunnel insulating film, the first magnetic layer and the metal layer, while depositing sputtered particles of the metal film on side walls of the second magnetic layer, the tunnel insulating film, the first magnetic layer and the metal layer to form a sidewall metal layer, and oxidizing the sidewall metal layer to form an insulative sidewall metal oxide layer.
Abstract(Chinese):

制造磁阻效应元件的方法包括在基板的上方形成第一电极，在第一电极的上方形成金属材料的金属层，在金属层的上方形成第一磁性层，在第一磁性层的上方形成隧道绝缘膜 在隧道绝缘膜上形成第二磁性层，在第二磁性层上方形成第二电极层，图案化第二电极层，图案化第二磁性层，隧道绝缘膜，第一磁性层和金属层，同时 在第二磁性层，隧道绝缘膜，第一磁性层和金属层的侧壁上沉积金属膜的溅射颗粒以形成侧壁金属层，并且氧化侧壁金属层以形成绝缘侧壁金属氧化物层 。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34 ...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46 ....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461 .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469 ......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理
H01L21/471 .......无机层（H01L21/475，H01L21/4757优先）
H01L21/473 ........由氧化物或玻璃状氧化物或以氧化物为基础的玻璃组成的无机层
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