Invention Grant
- Patent Title: Cylindrical sputtering target
- Patent Title (中): 圆柱形溅射靶
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Application No.: US12667151Application Date: 2008-07-01
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Publication No.: US08828198B2Publication Date: 2014-09-09
- Inventor: Shigehisa Todoko , Kenichi Itoh , Tetsuo Shibutami
- Applicant: Shigehisa Todoko , Kenichi Itoh , Tetsuo Shibutami
- Applicant Address: JP Yamaguchi
- Assignee: Tosoh Corporation
- Current Assignee: Tosoh Corporation
- Current Assignee Address: JP Yamaguchi
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2007-173841 20070702
- International Application: PCT/JP2008/061923 WO 20080701
- International Announcement: WO2009/005068 WO 20090108
- Main IPC: C23C14/34
- IPC: C23C14/34

Abstract:
To provide a cylindrical sputtering target, whereby cracking during sputtering can be remarkably reduced.A cylindrical sputtering target, wherein a cylindrical target material made of ITO or AZO has a relative density of at least 90%; the angle between the grinding direction on its outer circumferential surface and a straight line parallel with its cylindrical axis (out of such angles, θ represents an angle between 0° and 90°) satisfies 45° πR/L (where R is an outside diameter of the cylindrical target material, and L is the length of the cylindrical target material); and the surface roughness Ra of the outer circumferential surface of the cylindrical target material is at most 3 μm.
Public/Granted literature
- US20100326823A1 CYLINDRICAL SPUTTERING TARGET Public/Granted day:2010-12-30
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