Invention Grant
- Patent Title: FET nanopore sensor
- Patent Title (中): FET纳米孔传感器
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Application No.: US12781514Application Date: 2010-05-17
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Publication No.: US08828138B2Publication Date: 2014-09-09
- Inventor: Stephen W. Bedell , Christopher D'Emic , Hongbo Peng , Sufi Zafar
- Applicant: Stephen W. Bedell , Christopher D'Emic , Hongbo Peng , Sufi Zafar
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: C30B1/06
- IPC: C30B1/06 ; G01N27/414 ; B82Y15/00

Abstract:
A method of using a sensor comprising a field effect transistor (FET) embedded in a nanopore includes placing the sensor in an electrolyte comprising at least one of biomolecules and deoxyribonucleic acid (DNA); placing an electrode in the electrolyte; applying a gate voltage in the sub-threshold regime to the electrode; applying a drain voltage to a drain of the FET; applying a source voltage to a source of the FET; detecting a change in a drain current in the sensor in response to the at least one of biomolecules and DNA passing through the nanopore.
Public/Granted literature
- US20110279125A1 FET Nanopore Sensor Public/Granted day:2011-11-17
Information query
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