A nonvolatile memory device includes a first storage unit configured to store a plurality of first fault address information provided in a first test operation, a second storage unit configured to store a plurality of second fault address information provided in a second test operation which is performed later than the first test operation; a redundancy operation unit configured to, in performing a redundancy operation, determine the number of operation circuits corresponding to the first fault address information and the number of operation circuits corresponding to the second fault address information among a plurality of redundancy operation circuits based on address number information; and an address providing unit configured to read the plurality of first fault address information and the plurality of second fault address information, and sequentially provide the read information to the redundancy operation unit, wherein the address providing unit is further configured to detect the number of the first fault address information and generate the address number information.