Invention Grant
- Patent Title: Inline defect analysis for sampling and SPC
- Patent Title (中): 抽样和SPC的在线缺陷分析
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Application No.: US12154629Application Date: 2008-05-22
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Publication No.: US08799831B2Publication Date: 2014-08-05
- Inventor: Youval Nehmadi , Rinat Shimshi , Vicky Svidenko , Alexander T. Schwarm , Sundar Jawaharlal
- Applicant: Youval Nehmadi , Rinat Shimshi , Vicky Svidenko , Alexander T. Schwarm , Sundar Jawaharlal
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
In one embodiment, an inline defect analysis method includes receiving geometric characteristics of individual defects and design data corresponding to the individual defects, determining which of the individual defects are likely to be nuisance defects using the geometric characteristics and the corresponding design data, and refraining from sampling the defects that are likely to be nuisance defects.
Public/Granted literature
- US20080295048A1 Inline defect analysis for sampling and SPC Public/Granted day:2008-11-27
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