Invention Grant
US08799726B2 Method and apparatus for testing high capacity/high bandwidth memory devices
有权
用于测试高容量/高带宽存储器件的方法和装置
- Patent Title: Method and apparatus for testing high capacity/high bandwidth memory devices
- Patent Title (中): 用于测试高容量/高带宽存储器件的方法和装置
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Application No.: US13180301Application Date: 2011-07-11
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Publication No.: US08799726B2Publication Date: 2014-08-05
- Inventor: Joseph M. Jeddeloh
- Applicant: Joseph M. Jeddeloh
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/56 ; G11C29/26

Abstract:
A plurality of stacked memory device die and a logic circuit are connected to each other through a plurality of conductors. The stacked memory device die are arranged in a plurality of vaults. The logic circuit die serves as a memory interface device to a memory access device, such as a processor. The logic circuit die includes a plurality of link interfaces and downstream targets for transmitting received data to the vaults. The logic circuit die includes a packet builder and broadcaster configured to receive command, address and data signals over separate interfaces from a conventional tester, format the signals into a packet and broadcast the signals to a plurality of vaults.
Public/Granted literature
- US20110271158A1 METHOD AND APPARATUS FOR TESTING HIGH CAPACITY/HIGH BANDWIDTH MEMORY DEVICES Public/Granted day:2011-11-03
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