Invention Grant
US08799607B2 Memory controller and method for accessing a plurality of non-volatile memory arrays 有权
用于访问多个非易失性存储器阵列的存储器控​​制器和方法

  • Patent Title: Memory controller and method for accessing a plurality of non-volatile memory arrays
  • Patent Title (中): 用于访问多个非易失性存储器阵列的存储器控​​制器和方法
  • Application No.: US13080944
    Application Date: 2011-04-06
  • Publication No.: US08799607B2
    Publication Date: 2014-08-05
  • Inventor: Kevin K. ZhangXingyu Li
  • Applicant: Kevin K. ZhangXingyu Li
  • Applicant Address: US TX Austin
  • Assignee: Freescale Semiconductor, Inc.
  • Current Assignee: Freescale Semiconductor, Inc.
  • Current Assignee Address: US TX Austin
  • Agent Daniel D. Hill; James L. Clingan, Jr.
  • Priority: WOPCT/CN2010/001609 20101014
  • Main IPC: G06F12/00
  • IPC: G06F12/00
Memory controller and method for accessing a plurality of non-volatile memory arrays
Abstract:
A memory controller (16) is used in a system (10) having a main memory (22) and a set of non-volatile memories (26, 32, 38, 44). Each non-volatile memory comprises a plurality of sectors (S0-S28), pages, or other memory unit types. A command is received to write data to the set of non-volatile memories (26, 32, 38, 44). Within the data is identified a grouping of the data that is for writing to sectors in the set of non-volatile memories in which each non-volatile memory of the set of non-volatile memories is to be written and each sector to be written has a corresponding location to be written in all of the other non-volatile memories. Corresponding locations are locations that are in the same location in the sequential order. The grouping of data is written into the set of the non-volatile memories to result in the writing in the non-volatile memories occurring contemporaneously.
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