Invention Grant
- Patent Title: Measuring critical dimensions of a semiconductor structure
- Patent Title (中): 测量半导体结构的关键尺寸
-
Application No.: US11648965Application Date: 2007-01-03
-
Publication No.: US08798966B1Publication Date: 2014-08-05
- Inventor: John Hench , Daniel Wack , Edward Ratner , Yaoming Shi , Andrei Veldman
- Applicant: John Hench , Daniel Wack , Edward Ratner , Yaoming Shi , Andrei Veldman
- Applicant Address: US CA Milpitas
- Assignee: KLA-Tencor Corporation
- Current Assignee: KLA-Tencor Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Okamoto & Benedicto LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F7/60 ; G06F13/10 ; G06F11/26

Abstract:
One embodiment relates to a method of model-based optical metrology. An area of a geometrical structure of dispersive materials on a substrate is illuminated with polarized incident electromagnetic radiation using an illuminator of a scatterometer apparatus. Spectral components of the incident electromagnetic radiation reflected from the area are measured using a detector of the scatterometer apparatus. Using a computer for the scatterometer apparatus, parameter values are determined that minimize an objective function which represents a difference between the measured spectral components and computed spectral components based on a parameterized model of the geometrical structure. Steps for determining the parameter values that minimize the objective function include: computing a solution to state equations driven by a function representing the incident electromagnetic radiation, and computing a solution to an adjoint to the state equations. Other embodiments and features are also disclosed.
Information query