A non-volatile memory device includes a first string and a second string that each include a first drain selection transistor, a second drain selection transistor, a plurality of memory cells, and a source selection transistor that are coupled in series in that order, respectively, a first bit line coupled with a node between the first and second drain selection transistors of the first string, and a second bit line coupled with an end node of the second string on the side of the first drain selection transistor of the second string, wherein gates of the first drain selection transistors of the first and second strings are coupled with each other, and gates of the second drain selection transistors of the first and second strings are coupled with each other.