Invention Grant
- Patent Title: Filamentary memory devices and methods
- Patent Title (中): 遗迹记忆装置和方法
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Application No.: US13491116Application Date: 2012-06-07
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Publication No.: US08797784B2Publication Date: 2014-08-05
- Inventor: Lei Bi , Beth R. Cook , Marko Milojevic , Durai Vishak Nirmal Ramaswamy
- Applicant: Lei Bi , Beth R. Cook , Marko Milojevic , Durai Vishak Nirmal Ramaswamy
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00
Abstract:
Apparatus, devices, systems, and methods are described that include filamentary memory cells. Mechanisms to substantially remove the filaments in the devices are described, so that the logical state of a memory cell that includes the that includes the removable filament can be detected. Additional apparatus, systems, and methods are described.
Public/Granted literature
- US20130329483A1 FILAMENTARY MEMORY DEVICES AND METHODS Public/Granted day:2013-12-12
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