Invention Grant
US08797621B2 Atom phase-controlled double rephasing-based quantum memory and double-rephased photon echo method therefor
有权
基于原子相位控制的双重相移量子记忆和双重反射光子回波法
- Patent Title: Atom phase-controlled double rephasing-based quantum memory and double-rephased photon echo method therefor
- Patent Title (中): 基于原子相位控制的双重相移量子记忆和双重反射光子回波法
-
Application No.: US13466471Application Date: 2012-05-08
-
Publication No.: US08797621B2Publication Date: 2014-08-05
- Inventor: Byoung Seung Ham
- Applicant: Byoung Seung Ham
- Applicant Address: KR Incheon KR Gwangju
- Assignee: INHA Industry Partnership Institute,Gwangju Institute of Science and Technology
- Current Assignee: INHA Industry Partnership Institute,Gwangju Institute of Science and Technology
- Current Assignee Address: KR Incheon KR Gwangju
- Agency: Lowe Hauptman & Ham, LLP
- Priority: KR10-2012-0003954 20120112
- Main IPC: B82Y10/00
- IPC: B82Y10/00 ; G06N99/00

Abstract:
Disclosed herein are atom phase-controlled double rephasing-based quantum memory and a double-rephased photon echo method therefor. The atom phase-controlled double rephasing-based quantum memory includes an optical medium and an optical pulse generation unit. The optical medium has three energy levels (|1>, |2> and |3>), receives one or more optical pulses from an optical pulse generation unit, and generates output light that satisfies phase matching conditions. The optical pulse generation unit generates at least five optical pulses that resonate among the energy levels of the optical medium.
Public/Granted literature
Information query