Invention Grant
- Patent Title: Exposure apparatus, exposure method, and device manufacturing method
- Patent Title (中): 曝光装置,曝光方法和装置制造方法
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Application No.: US12265831Application Date: 2008-11-06
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Publication No.: US08797508B2Publication Date: 2014-08-05
- Inventor: Yuichi Shibazaki
- Applicant: Yuichi Shibazaki
- Applicant Address: JP Tokyo
- Assignee: Nikon Corporation
- Current Assignee: Nikon Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2007-289203 20071107
- Main IPC: G03B27/58
- IPC: G03B27/58 ; G03F7/20

Abstract:
During the transition from a state where one of wafer stages is located in an area below a projection optical system where a liquid immersion area is formed to a state where the other of the wafer stages is located in the area, both the wafer stages are made to be in proximity or in contact in a Y-axis direction in a state of being shifted in an X-axis direction, by making an overhang section and a stepped section that are arranged respectively on the wafer stages be engaged, and both the wafer stages are simultaneously driven in the Y-axis direction while maintaining this state. Accordingly, the liquid immersion area is delivered between the two wafer stages via the overhang section and leakage of a liquid that forms the liquid immersion area is restrained.
Public/Granted literature
- US20090225288A1 EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD Public/Granted day:2009-09-10
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