Invention Grant
- Patent Title: Semiconductor integrated circuit having voltage stabilizing circuit
- Patent Title (中): 具有稳压电路的半导体集成电路
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Application No.: US13244169Application Date: 2011-09-23
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Publication No.: US08797093B2Publication Date: 2014-08-05
- Inventor: Jong Su Kim
- Applicant: Jong Su Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0082318 20110818
- Main IPC: G05F1/10
- IPC: G05F1/10 ; H01L27/02

Abstract:
A semiconductor integrated circuit includes a first voltage supply unit, a second voltage supply unit configured to supply a voltage with a level different from that of the first voltage supply unit, and a voltage stabilizing unit connected between the first and second voltage supply units, and including at least one discharge path that includes a clamping section configured to temporarily drop a level of a voltage introduced from the first or second voltage supply unit, and a discharge section configured to discharge the voltage having passed through the clamping section to the second or first voltage supply unit.
Public/Granted literature
- US20130043925A1 SEMICONDUCTOR INTEGRATED CIRCUIT HAVING VOLTAGE STABILIZING CIRCUIT Public/Granted day:2013-02-21
Information query
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