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US08796904B2 Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer 有权
包括压电层和反压电层的体声波谐振器

Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer
Abstract:
In a representative embodiment, a bulk acoustic wave (BAW) resonator, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode, the first piezoelectric layer having a first c-axis oriented along a first direction; a second electrode disposed over the first piezoelectric layer; and a second piezoelectric layer disposed over the first electrode and adjacent to the first piezoelectric layer, wherein the second piezoelectric layer has a second c-axis oriented in a second direction that is substantially antiparallel to the first direction.
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