Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13752219Application Date: 2013-01-28
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Publication No.: US08796860B2Publication Date: 2014-08-05
- Inventor: Yuji Tada , Tsuyoshi Hirakawa , Hironori Nakamura , Takayuki Kurokawa
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2010-080938 20100331
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
A semiconductor device includes a substrate, a multi-layer wiring layer formed on the substrate, and including a signal line and ground lines extending above the signal line, one of the ground lines extending toward a direction in a layer and another one of the ground lines extending from the one of the ground lines toward another direction in the layer, a first pad on the multi-layer wiring layer, and a redistribution layer formed on the multi-layer wiring layer, including a second pad, a redistribution line coupling the first pad and the second pad, and an insulation film covering the redistribution line.
Public/Granted literature
- US20130140717A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-06-06
Information query
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