Invention Grant
- Patent Title: RF and milimeter-wave high-power semiconductor device
- Patent Title (中): 射频和毫米波大功率半导体器件
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Application No.: US12855274Application Date: 2010-08-12
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Publication No.: US08796843B1Publication Date: 2014-08-05
- Inventor: Dubravko I. Babic , Quentin E. Diduck , Alex Schreiber
- Applicant: Dubravko I. Babic , Quentin E. Diduck , Alex Schreiber
- Applicant Address: US CA Santa Clara
- Assignee: Element Six Technologies US Corporation
- Current Assignee: Element Six Technologies US Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Bryan Cave LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/34
Abstract:
High-power and high-frequency semiconductor devices require high signal integrity and high thermal conductance assembly technologies and packages. In particular, wide-gap-semiconductor devices on diamond benefit from spatially separate electrical and thermal connections. This application discloses assembly and package architectures that offer high signal integrity and high thermal conductance.
Information query
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