Invention Grant
- Patent Title: Complex semiconductor packages and methods of fabricating the same
- Patent Title (中): 复合半导体封装及其制造方法
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Application No.: US12413399Application Date: 2009-03-27
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Publication No.: US08796831B2Publication Date: 2014-08-05
- Inventor: Gwi-gyeon Yang , Seung-won Lim
- Applicant: Gwi-gyeon Yang , Seung-won Lim
- Applicant Address: KR Wonmi-District, Buncheon, Kyonggi Province
- Assignee: Fairchild Korea Semiconductor, Ltd.
- Current Assignee: Fairchild Korea Semiconductor, Ltd.
- Current Assignee Address: KR Wonmi-District, Buncheon, Kyonggi Province
- Agent Kenneth E. Horton; Kirton McConkie
- Priority: KR10-2008-0029918 20080331
- Main IPC: H01L23/495
- IPC: H01L23/495

Abstract:
Disclosed are complex semiconductor packages, each including a large power module package which includes a small semiconductor package, and methods of manufacturing the complex semiconductor packages. An exemplary complex semiconductor package includes a first package including: a first packaging substrate; a plurality of first semiconductor chips disposed on the first packaging substrate; and a first sealing member covering the first semiconductor chips on the first packaging substrate; and at least one second package separated from the first packaging substrate, disposed in the first sealing member, and including second semiconductor chips.
Public/Granted literature
- US20090243061A1 Complex Semiconductor Packages and Methods of Fabricating the Same Public/Granted day:2009-10-01
Information query
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