Invention Grant
- Patent Title: Semiconductor photodetector and radiation detector system
- Patent Title (中): 半导体光电探测器和辐射探测器系统
-
Application No.: US13501939Application Date: 2010-10-13
-
Publication No.: US08796802B2Publication Date: 2014-08-05
- Inventor: Michael Pierschel , Frank Kudella
- Applicant: Michael Pierschel , Frank Kudella
- Applicant Address: DE Berlin
- Assignee: First Sensor AG
- Current Assignee: First Sensor AG
- Current Assignee Address: DE Berlin
- Agency: Sutherland Asbill & Brennan LLP
- Priority: DE102009049793 20091016
- International Application: PCT/DE2010/075108 WO 20101013
- International Announcement: WO2011/044896 WO 20110421
- Main IPC: H01L31/107
- IPC: H01L31/107
Abstract:
Semiconductor photodetectors are provided that may enable optimized usage of an active detector array. The semiconductor photodetectors may have a structure that can be produced and/or configured as simply as possible. A radiation detector system is also provided.
Public/Granted literature
- US20120248562A1 Semiconductor Photodetector and Radiation Detector System Public/Granted day:2012-10-04
Information query
IPC分类:
